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NASA Technical Reports Server (NTRS) 19960047115: Fast Risetime Rev... |
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by NASA Technical Reports Server (NTRS) |
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SiC-based high temperature power devices are being |
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developed for aerospace systems which will require high |
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reliability. One behavior crucial to power device |
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reliability. To date, it has necessarily been assumed to |
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date is that the breakdown behavior of SiC pn junctions |
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will be similar to highly reliable silicon-based pn |
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junctions. Challenging this assumption, we report the |
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observation of anomalous unreliable reverse breakdown |
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behavior in moderately doped (2-3 x 10(exp 17) cm(exp - |
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3)) small-area 4H- and 6H-SiC pn junction diodes at |
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temperatures ranging from 298 K (25 C) to 873 K (600 C). |
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We propose a mechanism in which carrier emission from un- |
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ionized dopants and deep level defects leads to this |
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unstable behavior. The fundamental instability mechanism |
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is applicable to all wide bandgap semiconductors whose |
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dopants are significantly un-ionized at typical device |
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operating temperatures. |
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Date Published: 2016-10-13 08:13:50 |
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Identifier: NASA_NTRS_Archive_19960047115 |
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Item Size: 13206508 |
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Language: english |
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Media Type: texts |
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