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NASA Technical Reports Server (NTRS) 19910021944: Etching method fo...
by NASA Technical Reports Server (NTRS)
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A method for etching or removing polymers, photoresists,
and organic contaminants from a substrate is disclosed.
The method includes creating a more reactive gas species
by producing a plasma discharge in a reactive gas such as
oxygen and contacting the resulting gas species with a
sacrificial solid organic material such as polyethylene
or polyvinyl fluoride, reproducing a highly reactive gas
species, which in turn etches the starting polymer,
organic contaminant, or photoresist. The sample to be
etched is located away from the plasma glow discharge
region so as to avoid damaging the substrate by exposure
to high energy particles and electric fields encountered
in that region. Greatly increased etching rates are
obtained. This method is highly effective for etching
polymers such as polyimides and photoresists that are
otherwise difficult or slow to etch downstream from an
electric discharge in a reactive gas.
Date Published: 2016-09-26 22:25:45
Identifier: NASA_NTRS_Archive_19910021944
Item Size: 15756478
Language: english
Media Type: texts
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