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DTIC ADB004294: High-Power LOC Lasers: Synthesis and Mode Control |
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by Defense Technical Information Center |
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Heterojunction laser diodes of GaAs and (A1Ga)As have |
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become increasingly sophisticated structures fabricated |
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by liquid-phase epitaxy (LPE). Because of progress made |
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both in the technology and in our theoretical |
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understanding of laser diodes, it is now possible to |
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design devices for specific applications. There is |
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general interest in devices both for high peak power |
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(pulsed) operation at room temperature and in diodes |
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capable of reliable continuous room-temperature |
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operation. Both types of devices require low thermal and |
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electrical resistance but other requirements differ. The |
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high-power pulsed lasers need not have very low threshold |
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current densities, but they must be capable of |
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withstanding catastrophic degradation resulting from |
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excessive optical flux density at the emitting facet. The |
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cw lasers, on the other hand, operate at low power levels |
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(tens of milliwatts) and require low threshold current |
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densities to minimize thermal dissipation problems. The |
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beam divergence should be as low as possible in all |
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devices to reduce the size of the external optical |
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collimating system. In this final report, we discuss |
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techniques used to achieve the control of material |
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parameters of state-of-the-art high-power laser diodes |
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with particular emphasis on the question of radiation |
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pattern control. |
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Date Published: 2015-10-30 06:26:49 |
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Identifier: DTIC_ADB004294 |
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Item Size: 32089188 |
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Language: english |
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Media Type: texts |
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# Topics |
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DTIC Archive; Lockwood, Harry F ; Kre... |
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