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DTIC ADA260275: Optical Studies of Laterally Confined Quantum Well ... |
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by Defense Technical Information Center |
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This final technical report on ARO Contract No. DAAL03-89- |
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K-0170 summarizes the issues examined and the findings |
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related to (1) absorption and electroabsorption behavior |
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of strained GaAs/InGaAs multiple quantum wells (MQW), (2) |
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the dc transport characteristics of strained |
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GaAs/InGaAs/AlAs based resonant tunnelling diodes, and |
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(3) realization of three-dimensionally confined quantum |
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well structures on patterned GaAs(111)B substrates via a |
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one-step growth process labelled substrate encoded sized |
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reducing epitaxy (SESRE). Use of pre-patterned substrates |
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as a means of strain relief without the generation of |
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dislocations is shown to allow growth of high quality |
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MQWs to thicknesses of approx. 1 micron needed for |
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sufficient optical interaction path length in p-i(MQW)-n |
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modulators and detectors. The role of defect induced deep |
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levels in impacting the exciton linewidth through their |
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influence on the internal field distribution is revealed |
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for the first time. Three dimensionally confined |
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GaAs/AlGaAs structures are realized for the first time |
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using SESRE. |
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Date Published: 2018-03-09 10:59:09 |
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Identifier: DTIC_ADA260275 |
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Item Size: 38162780 |
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Language: english |
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Media Type: texts |
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# Topics |
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DTIC Archive; Madhukar, Anupam; UNIVE... |
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