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DTIC ADA230424: Low Temperature Photoluminescence Study of Holmium ... |
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by Defense Technical Information Center |
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Low temperature photoluminescence studies were performed |
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on holmium implanted into InP, GaAs, and Si; and thulium |
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implanted into AlGaAs, GaAs, and Si. Samples were |
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annealed by the conventional furnace and rapid thermal |
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techniques. None of the characteristic 4f emissions of |
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holmium were found in the spectral region of .73 to 1.55 |
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eV. AlGaAs:Tm showed strong thulium emissions in the .93 |
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to 1.03 eV region. These emissions were studied and |
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compared to those in GaAs:Tm. Low and high temperature |
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annealed samples showed evidence of trivalent Tm centers. |
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Temperature dependence studies showed that thulium 4f |
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emissions were present above 200 K but quench by 240 K. |
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Laser excitation power dependence studies showed that the |
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luminescent intensity of the main thulium 4f line depends |
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linearly on the square root of laser power. This result |
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implies that non-radiative decay mechanisms complete with |
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the excitation and subsequent radiative decay of the |
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thulium 4f shell. Also observed for the first time were |
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thulium 4f emissions in the .93 to 1.03 eV region in high |
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purity silicon implanted with thulium. |
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Date Published: 2018-02-28 02:00:26 |
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Identifier: DTIC_ADA230424 |
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Item Size: 42499294 |
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Language: english |
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Media Type: texts |
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# Topics |
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DTIC Archive; Silkowski, Eric; AIR FO... |
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