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DTIC ADA229559: Dielectric Spectroscopy of Semiconductors
by Defense Technical Information Center
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This Report describes the principal results of study
under the US army contract on Dielectric Spectroscopy of
Semiconductors (DSS). Over the last three years, the
following areas of study were pursued: a) time-domain
study of the decay of open-circuit photovoltage in p-n
junctions; b) frequency-domain characterisation of a
variety of p-n junctions on high-resistivity silicon,
including forward-baised junctions; c) frequency-domain
photoconductive measurements on such p-n junctions; and
d) a theoretical study of the significance of the time-
and frequency-dependence of the response of
semiconductors. The results obtained during this contract
consolidate our understanding of the nature of the
trapping and recombination processes which consistently
show fractional power-law dependenced on time instead of
the generally expected exponential dependence. The fact
that the observed time dependence is fully consistent
with that of delayed luminescence adds further incentive
to the development of a general theoretical model for
these processes and one such model is proposed.
Date Published: 2018-02-28 01:05:55
Identifier: DTIC_ADA229559
Item Size: 8379637
Language: english
Media Type: texts
# Topics
DTIC Archive; Jonscher, Andrew K ; RO...
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