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DTIC ADA186723: Growth of HgZnTe Layers by LPE Technique. |
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by Defense Technical Information Center |
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The goal of this project is to evaluate the LPE growth |
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technique as a tool for preparing Hg1-xZnxTe suitable for |
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photodetectors. In the first year of this project |
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optimization of the growth conditions was done. The |
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objective for the second year is to study the parameters |
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which determine the transport electrical properties of |
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the Hg1-xZnTe epilayers. In this interim report we report |
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the first results of annealing experiments on the |
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epilayers and compare the characteristics of the annealed |
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epilayers with those of the as grown . The as grown |
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epilayers of Hg1-xZnxTe, 0.15 or = x or =0.24, exhibit p |
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type conductivity with carrier concentration of the order |
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1x10 to the 17th power/cm3. In order to decrease the |
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carrier concentration down to the level of 1x10 to the |
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16th power, the optimum carrier concentration for |
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photodetectors, the epilayers were annealed in Hg |
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atmosphere. The conditions of the annealing were similar |
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to those which are generally used for the annealing of |
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Hg1-xCdxTe, namely, temperature of the sample around 400 |
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C for several hours. Keywords: Mercury compounds, Cadmium |
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tellurides. |
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Date Published: 2018-02-16 15:47:23 |
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Identifier: DTIC_ADA186723 |
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Item Size: 2664226 |
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Language: english |
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Media Type: texts |
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DTIC Archive; Sher, Ariel; ISRAEL ATO... |
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