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DTIC ADA124428: Swept Line Electron Beam Annealing of Ion Implanted... |
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by Defense Technical Information Center |
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The capabilities of a Swept Line Electron Beam (SLEB) in |
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annealing ion-implanted semiconductors are examined. This |
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technique employs a fixed geometry, line-shaped electron |
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beam through which implanted samples are mechanically |
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scanned. In general, this technique can produce annealing |
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results comparable or superior to those achievable by |
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conventional furnace annealing. Residual point defects in |
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self-implanted amorphous silicon treated by SLEB and |
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furnace processes are examined by Deep Level Transient |
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Spectroscopy. |
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Date Published: 2018-01-09 08:57:06 |
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Identifier: DTIC_ADA124428 |
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Item Size: 86198848 |
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Language: english |
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Media Type: texts |
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DTIC Archive; Soda,Kenneth James; ILL... |
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