 |
DTIC ADA109305: Electrical Compensation in InP Produced by Backgrou... |
 |
by Defense Technical Information Center |
 |
Thumbnail |
|
Download |
 |
Web page |
|
|
|
A steady-state liquid phase epitaxial growth system is |
|
being used to study the factors that influence the |
|
nucleation, growth and purity of InP. Humidity (>30% |
|
relative) has been found to be a major contaminant that |
|
leads to erratic growth morphologies and poor electrical |
|
properties. With the growth system and substrate |
|
preparations in a low humidity (<20% relative) room the |
|
reproducibility of epitaxial growths has been improved. |
|
The discoloration of the bone white pyrolytic boron |
|
nitride growth cell has helped to identify several |
|
sources of contamination that oxidize the In-melt and |
|
lead to premature nucleation. The nucleation and growth |
|
of epitaxial InP now appears to be limited by phosphorus |
|
transport instabilities in the P-saturated In-melt. A |
|
thermochemical analysis of phosphorus equilibria with In |
|
and InP may provide an insight into liquid solid |
|
stability conditions. The results are in excellent |
|
agreement with the stability of the In-P liquidus curve |
|
and InP substrates under PH3-H2 mixtures. The analysis |
|
appears to indicate that the partial pressure of P4 |
|
controls the nucleation of InP and the stability of the |
|
In-P liquidus curve. At temperatures below 700 deg C the |
|
partial pressure of P2 is greater than that for P4 and |
|
appears to stabilize the InP substrate degradation. |
|
(Author) |
|
|
|
Date Published: 2017-12-31 03:08:48 |
|
Identifier: DTIC_ADA109305 |
|
Item Size: 19726504 |
|
Language: english |
|
Media Type: texts |
|
|
|
# Topics |
|
DTIC Archive; Mattes, B. L.; MICHIGAN... |
|
|
|
# Collections |
|
dticarchive |
|
additional_collections |
|
|
|
# Uploaded by |
|
@chris85 |
|
|
|
# Similar Items |
|
View similar items |
|
|
|
PHAROS |
|
