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DTIC ADA1040367: The Application of Ion Implantation to Compound Fo...
by Defense Technical Information Center
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Contents: Solid-Phase Epitaxial Growth (SPEG);
Radioactive Si Tracer Technique; Redistribution of
Impurities in Silicide Formation; Ion Mixing; Very Thin
Si Films, and 400 kV Ion Implantation System.
Date Published: 2020-04-10 22:27:51
Identifier: DTIC_ADA1040367
Item Size: 25943333
Language: english
Media Type: texts
# Topics
DTIC Archive; Mayer,James W ; CALIFOR...
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