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DTIC ADA102123: Radiation-Hardened N(+) Gate CMOS/SOS. |
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by Defense Technical Information Center |
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Process development work for a hardened N+ polysilicon- |
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gate CMOS/SOS process has demonstrated that it is |
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possible to make functional 4K CMOS/SOS static RAMs that |
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are hard to 5 x 10 to the 5th power rads without the |
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implementation of special hardened circuit design |
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techniques. Present circuit probe yields are low, limited |
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by the lack of a hardened low-temperature contoured field |
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oxide. Independent research has shown that a hardened |
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reflow process is possible for such field oxides. |
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Development of this reflow process is nearly complete and |
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should result in significant improvement in yields when |
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fully integrated into the rad-hard N+ process. (Author) |
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Date Published: 2017-12-17 17:06:39 |
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Identifier: DTIC_ADA102123 |
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Item Size: 41456274 |
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Language: english |
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Media Type: texts |
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# Topics |
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DTIC Archive; Hughes,G W ; RCA LABS ... |
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@chris85 |
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