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DTIC ADA1010430: Spectroscopic Studies of the Electronic Structure ...
by Defense Technical Information Center
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The electronic structure and properties of semiconductor
interfaces including both vacuum-semiconductor and metal-
semiconductor interfaces as well as relevant metal and
semiconductor materials have been investigated under this
contract. The emphasis has been on elucidating the
electronic properties of these materials and their
interfaces, e.g., metal-semiconductor Schottky barriers,
which are of far reaching importance in such
semiconductor devices as MOSFETS, CCD devices,
photovoltaic devices, etc. Extensive studies of the
electronic structure of semiconductor surfaces and
interfaces and related metal surfaces have been performed
as a function of surface preparation (include laser
annealing), doping, thickness of adsorbed overlayers,
etc. The principle technique used has been photoelectron
spectroscopy (XPS and UPS - with an emphasis on angle-
resolved studies using synchrotron radiation and yield
spectroscopy); other techniques include electron energy
loss spectroscopy, low energy electron diffraction and
theoretical band structure methods. Major achievements of
our research program includes world-leading contributions
to: (1) the electronic structure of cleaned and annealed
Si(111) surfaces; (2) accurate experimental
determinations of electron energy vs momentum band
dispersions E(k) of selected materials (such E(K)
dispersions are of central importance in solid state
physics in understanding the electronic, physical and
chemical properties of materials); and (3) the
development and application of surface core level
spectroscopy, a promising new photoemission technique.
Date Published: 2020-01-12 21:43:56
Identifier: DTIC_ADA1010430
Item Size: 32317889
Language: english
Media Type: texts
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